TRANSCEND 8GB 1600MHZ Laptop RAM

DDR3 SO-DIMM is high-speed, low power memory module that use DDR3 SDRAM in FBGA package and a 2048 bits serial EEPROM on a 204-pin printed circuit board. DDR3 SO-DIMM is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Pin Identification Symbol Function A0~A15, BA0~BA2 Address/Bank input DQ0~DQ63 Data Input / Output. DQS0~DQS7 Data strobes /DQS0~/DQS7 Differential Data strobes CK0, /CK0,CK1, /CK1 Clock Input. (Differential pair) CKE0, CKE1 Clock Enable Input. ODT0, ODT1 On-die termination control line /CS0, /CS1 DIMM Rank Select Lines. /RAS Row Address Strobe /CAS Column Address Strobe /WE Write Enable DM0~DM7 Data masks/high data strobes VDD Voltage power supply VREFDQ/ VREFCA Power Supply for Reference VDDSPD SPD EEPROM Power Supply SA0~SA2 I2C serial bus address select for EEPROM SCL I2C serial bus clock for EEPROM SDA I2C serial bus data for EEPROM VSS Ground /RESET Set DRAMs Known State VTT SDRAM I/O termination supply NC No Connection Features  RoHS compliant products.  JEDEC standard 1.5V ± 0.075V Power supply  VDDQ=1.5V ± 0.075V  Clock Freq: 400MHZ for 800Mb/s/Pin 533MHZ for 1066Mb/s/Pin 667MHZ for 1333Mb/s/Pin. 800MHZ for 1600Mb/s/Pin  Programmable CAS Latency: 5, 6, 7, 8, 9 ,10 ,11  Programmable Additive Latency (Posted /CAS): 0,CL-2 or CL-1 clock  Programmable /CAS Write Latency (CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333) , 8(DDR3-1600)  8 bit pre-fetch  Burst Length: 4, 8  Internal calibration through ZQ pin  On Die Termination with ODT pin  Serial presence detect with EEPROM  Asynchronous reset
Memory Size: 8 GB
Memory Technology: DDR3 SDRAM
Memory Voltage: 1.35 V